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mw6ic2015nbr1 MW6IC2015GNBR1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw6ic2015n wideband integrated circuit is designed for base station applications. it uses freescale?s newest high voltage (26 to 32 volts) ldmos ic technology and integrates a multi - stage structure. its wideband on - chip design makes it usable from 1805 to 1990 mhz. the linearity performances cover all modulation formats for cellular applications: gsm, gsm edge, phs, tdma, cdma, w - cdma and td - scdma. final application ? typical two - tone performance: v dd = 26 volts, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 watts pep, full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 26 db power added efficiency ? 28% imd ? - 30 dbc driver application ? typical gsm edge performance: v dd = 26 volts, i dq1 = 130 ma, i dq2 = 170 ma, p out = 3 watts avg., full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 27 db power added efficiency ? 19% spectral regrowth @ 400 khz offset = - 69 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 0.8% rms ? capable of handling 3:1 vswr, @ 26 vdc, 1990 mhz, 15 watts cw output power ? stable into a 3:1 vswr. all spurs below - 60 dbc @ 100 mw to 8 w cw p out . features ? characterized with series equivalent large - signal impedance parameters and common source scattering parameters ? on - chip matching (50 ohm input, dc blocked, >5 ohm output) ? integrated quiescent current temperature compensation with enable/disable function ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel document number: mw6ic2015n rev. 2, 2/2007 freescale semiconductor technical data 1805 - 1990 mhz, 15 w, 26 v gsm/gsm edge, cdma rf ldmos wideband integrated power amplifiers mw6ic2015nbr1 MW6IC2015GNBR1 case 1329 - 09 to - 272 wb - 16 plastic mw6ic2015nbr1 case 1329a - 03 to - 272 wb - 16 gull plastic MW6IC2015GNBR1 (top view) gnd nc rf in v gs1 gnd rf out / v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 quiescent current temperature compensation v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 nc nc nc nc nc nc note: exposed backside flag is source terminal for transistors. figure 1. functional block diagram figure 2. pin connections ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +6 vdc storage temperature range t stg - 65 to +200 c operating junction temperature t j 200 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case final application stage 1, 26 vdc, i dq1 = 100 ma (p out = 15 w cw) stage 2, 26 vdc, i dq2 = 170 ma driver application stage 1, 26 vdc, i dq1 = 130 ma (p out = 3 w cw) stage 2, 26 vdc, i dq2 = 170 ma r jc 4.3 1.2 4.3 1.3 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1a (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale 1930 - 1990 mhz test fixture, 50 ohm system) v dd = 26 vdc, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 w pep, f1 = 1930 mhz, f2 = 1930.1 mhz and f1 = 1990 mhz, f2 = 1990.1 mhz, two - tone cw power gain g ps 24 26 ? db power added efficiency pae 26 28 ? % intermodulation distortion imd ? -30 -27 dbc input return loss irl ? ? -10 db typical two - tone performances (in freescale test fixture, 50 ohm system) v dd = 26 vdc, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 w pep, 1805 - 1880 mhz, two - tone cw, 100 khz tone spacing power gain g ps ? 26 ? db power added efficiency pae ? 28 ? % intermodulation distortion imd ? -30 ? dbc input return loss irl ? -10 ? db 1. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw6ic2015nbr1 MW6IC2015GNBR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 26 vdc, i dq1 = 100 ma, i dq2 = 170 ma, 1805 - 1880 mhz and 1930 - 1990 mhz saturated pulsed output power, cw (8 sec(on), 1 msec(off)) p sat ? 35 ? w quiescent current accuracy over temperature with 1.8 k gate feed resistors ( - 10 to 85 c) (1) i qt ? 3 ? % gain flatness in 30 mhz bandwidth @ p out = 3 w cw g f ? 0.3 ? db average deviation from linear phase in 30 mhz bandwidth @ p out = 3 w cw ? 1 ? average group delay @ p out = 3 w cw including output matching delay ? 2.7 ? ns part - to - part insertion phase variation @ p out = 3 w cw, six sigma window ? ? 15 ? typical gsm edge performances (in freescale gsm edge test fixture, 50 ohm system) v dd = 26 vdc, i dq1 = 130 ma, i dq2 = 170 ma, p out = 3 w avg., 1805 - 1990 mhz and 1930 - 1990 mhz edge modulation power gain g ps ? 27 ? db power added efficiency pae ? 19 ? % error vector magnitude evm ? 0.8 ? % spectral regrowth at 400 khz offset sr1 ? -69 ? dbc spectral regrowth at 600 khz offset sr2 ? -78 ? dbc 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family. go to http://www .freescale.com/rf . select documentation/application notes - an1977.
4 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 z6* 0.61 x 0.04 microstrip z7 1.30 x 0.04 microstrip z8, z9 1.18 x 0.08 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 * variable for tuning. z1* 1.68 x 0.08 microstrip z2 0.50 x 0.08 microstrip z3 0.15 x 0.04 microstrip z4 0.13 x 0.35 microstrip z5 0.10 x 0.35 microstrip figure 3. mw6ic2015nbr1(gnbr1) test circuit schematic ? 1930 - 1990 mhz r1 r2 z2 rf input v gg1 z4 z5 rf output c11 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc nc nc dut z3 c1 v dd1 z8 quiescent current temperature compensation z1 nc z9 z6 z7 c7 c8 c4 c5 c13 c15 c14 c6 nc c12 v gg2 c9 c10 c2 c3 table 6. mw6ic2015nbr1(gnbr1) test circuit component designations and values ? 1930 - 1990 mhz part description part number manufacturer c1, c14, c15 2.2 f chip capacitors c3225x5r1h225mt tdk c2, c4, c11 5.6 pf chip capacitors atc100b5r6ct500xt atc c3, c5 10 f chip capacitors c5750x5r1h106mt tdk c6 1 pf chip capacitor atc100b1r0bt500xt atc c7, c8 2.2 pf chip capacitors atc100b2r2bt500xt atc c9, c10 0.5 pf chip capacitors atc100b0r5bt500xt atc c12 0.2 pf chip capacitor atc100b0r2bt500xt atc c13 0.1 pf chip capacitor atc100b0r1bt500xt atc r1 10 k , 1/4 w chip resistor crcw12061001fkta vishay r2 18 , 1/4 w chip resistor crcw120618r0fkta vishay
mw6ic2015nbr1 MW6IC2015GNBR1 5 rf device data freescale semiconductor figure 4. mw6ic2015nbr1(gnbr1) test circuit component layout ? 1930 - 1990 mhz v dd1 c1 v gg1 v dd2 cut out area mw6ic2015, rev. 0 c6 c14 r1 r2 v gg2 c4 c5 c10 c8 c7 c9 c11 c12 c13 c2 c3 c15
6 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 typical characteristics ? 1930 - 1990 mhz 2000 10 40 1900 ?60 0 irl g ps imd f, frequency (mhz) v dd = 26 vdc, p out = 7.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma 100 khz tone spacing 35 ?10 30 25 ?20 20 ?30 15 ?40 ?50 1920 1960 1980 figure 5. two - tone wideband performance @ p out = 7.5 watts avg. pae pae , power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 1940 2000 0 30 1900 ?60 0 irl f, frequency (mhz) v dd = 26 vdc, p out = 1.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma 100 khz tone spacing 25 ?10 20 15 ?20 10 ?30 5 ?40 ?50 1920 1960 1980 figure 6. two - tone wideband performance @ p out = 1.5 watts avg. pae, power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 1940 g ps pae imd p out , output power (watts) avg. 30 23 31 1 i dq1 = 100 ma i dq2 = 210 ma v dd = 26 vdc center frequency = 1960 mhz 100 khz tone spacing 29 27 25 10 figure 7. two - tone power gain versus output power g ps , power gain (db) 30 28 26 24 0.1 i dq1 = 100 ma i dq2 = 170 ma i dq1 = 130 ma i dq2 = 170 ma i dq1 = 100 ma i dq2 = 130 ma i dq1 = 70 ma i dq2 = 170 ma 30 ?80 ?10 0.1 7th order v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma f = 1960 mhz, 100 khz tone spacing 5th order 3rd order 110 ?20 ?30 ?40 ?50 ?60 ?70 p out , output power (watts) pep figure 8. intermodulation distortion products versus output power imd, intermodulation distortion (dbc)
mw6ic2015nbr1 MW6IC2015GNBR1 7 rf device data freescale semiconductor typical characteristics ? 1930 - 1990 mhz 10 ?80 ?30 0.1 7th order two ?tone spacing (mhz) 5th order 3rd order ?40 ?50 ?60 1 100 figure 9. intermodulation distortion products versus tone spacing imd, intermodulation distortion (dbc) ?70 v dd = 26 vdc, p out = 75 w (pep) i dq1 = 100 ma, i dq2 = 170 ma two ?tone measurements (f1 + f2)/2 = center frequency of 1960 mhz 30 48 p3db = 44.8 dbm (30 w) p in , input power (dbm) v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz 46 44 42 40 38 15 20 25 actual ideal 10 figure 10. pulsed cw output power versus input power p out , output power (dbm) p1db = 44 dbm (25 w) im3 (dbc), acpr (dbc) 0?60 p out , output power (watts) avg. 35 ?25 30 ?30 25 ?35 20 ?40 5 ?50 0.1 10 30 ?45 15 figure 11. 2 - carrier w - cdma acpr, im3, power gain and power added efficiency versus output power pae , power added efficiency (%), g ps , power gain (db) 10 ?55 pae acpr im3 v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma f1 = 1955 mhz, f2 = 1965 mhz 2?carrier w?cdma 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) g ps 1 30 22 32 0.1 0 50 t c = ?30 c 25 c 85 c ?30 c 25 c 85 c 10 1 30 28 26 24 40 30 20 10 p out , output power (watts) cw figure 12. power gain and power added efficiency versus cw output power g ps , power gain (db) pae, power added efficiency (%) pae v dd = 26 vdc i dq1 = 100 ma i dq2 = 170 ma f = 1960 mhz g ps p out , output power (watts) cw figure 13. power gain versus output power 16 v i dq1 = 100 ma i dq2 = 170 ma f = 1840 mhz v dd = 12 v 20 v 28 v 30 v 30 18 30 020 28 24 22 26 20 51015 g ps , power gain (db) 26 v 25
8 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 typical characteristics ? 1930 - 1990 mhz 2100 24 28 1850 ?30 ?10 s21 f, frequency (mhz) figure 14. broadband frequency response s11 27 ?15 26 ?20 25 ?25 2050 2000 1950 1900 s11 (db) s21 (db) v dd = 26 vdc p out = 35 dbm cw i dq1 = 100 ma i dq2 = 170 ma 2020 22 32 1880 t c = ?30 c 25 c 85 c 30 28 26 24 1920 1940 1960 f, frequency (mhz) figure 15. power gain versus frequency g ps , power gain (db) 1900 1980 2000 v dd = 26 vdc, p out = 7.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma two ?tone measurements, center frequency = 1960 mhz p out , output power (watts) avg. 30 4 10 v dd = 26 vdc i dq1 = 100 ma i dq2 = 170 ma f = 1960 mhz edge modulation 8 6 0 10 1 2 20 50 40 30 0 10 pae t c = ?30 c 25 c figure 16. evm and power added efficiency versus output power evm, error vector magnitude (% ms) pae, power added efficiency (%) 85 c evm 30 ?85 ?50 p out , output power (watts) avg. ?55 ?60 ?65 ?70 ?75 ?80 110 t c = ?30 c 85 c ?30 c 25 c sr @ 400 khz figure 17. spectral regrowth at 400 and 600 khz versus output power spectral regrowth @ 400 khz and 600 khz (dbc) 0.1 sr @ 600 khz 85 c 25 c v dd = 26 vdc, i dq1 = 100 ma i dq2 = 170 ma, f = 1960 mhz edge modulation
mw6ic2015nbr1 MW6IC2015GNBR1 9 rf device data freescale semiconductor typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 18. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 26 vdc, p out = 15 w pep, and pae = 28%. mttf calculator available at http:/www.freescale.com/rf. select tools/ software/application software/calculators to access the mttf calcu? lators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 2nd stage 1st stage 10 8 gsm test signal figure 19. edge spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 200 khz span 2 mhz center 1.96 ghz ?110 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms rbw = 30 khz
10 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 z o = 25 z load f = 1990 mhz f = 1930 mhz z source f = 1990 mhz f = 1930 mhz v dd = 26 vdc, i dq1 = 100 ma, i dq2 = 170 ma, p out = 15 w cw f mhz z source z load 1930 23.37 - j21.93 1.62 + j0.26 1950 22.77 - j22.53 1.59 + j0.04 1970 22.19 - j22.20 1.57 - j0.16 1990 22.64 - j21.84 1.54 - j0.36 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 20. series equivalent source and load impedance ? 1930 - 1990 mhz
mw6ic2015nbr1 MW6IC2015GNBR1 11 rf device data freescale semiconductor z7* 0.41 x 0.04 microstrip z8 1.18 x 0.04 microstrip z9, z10 1.18 x 0.08 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 * variable for tuning. z1* 1.64 x 0.08 microstrip z2 0.54 x 0.08 microstrip z3 0.15 x 0.04 microstrip z4 0.13 x 0.35 microstrip z5 0.10 x 0.35 microstrip z6* 0.26 x 0.04 microstrip figure 21. mw6ic2015nbr1(gnbr1) test circuit schematic ? 1805 - 1880 mhz r1 r2 z2 rf input v gg1 z4 z5 rf output c11 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc nc nc dut z3 c1 v dd1 z9 quiescent current temperature compensation z1 nc z10 z6 z7 z8 c7 c8 c4 c5 c13 c15 c14 c6 nc c12 v gg2 c16 c9 c10 c2 c3 table 7. mw6ic2015nbr1(gnbr1) test circuit component designations and values ? 1805 - 1880 mhz part description part number manufacturer c1, c14, c15 2.2 f chip capacitors c3225x5r1h225mt tdk c2, c4, c11 5.6 pf chip capacitors atc100b5r6ct500xt atc c3, c5 10 f chip capacitors c5750x5r1h106mt tdk c6 1.5 pf chip capacitor atc100a1r5bt500xt atc c7, c8 2.7 pf chip capacitors atc100b2r7bt500xt atc c9, c10, c12 0.8 pf chip capacitors atc100b0r8bt500xt atc c13 0.1 pf chip capacitor atc100b0r1bt500xt atc c16 1 pf chip capacitor atc100b1r0bt500xt atc r1 10 k , 1/4 w chip resistor crcw12061001fkta vishay r2 18 , 1/4 w chip resistor crcw120618r0fkta vishay
12 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 figure 22. mw6ic2015nbr1(gnbr1) test circuit component layout ? 1805 - 1880 mhz v dd1 c1 v gg1 v dd2 cut out area mw6ic2015, rev. 0 c6 c14 r1 r2 v gg2 c4 c5 c10 c8 c7 c9 c11 c12 c13 c16 c2 c3 c15
mw6ic2015nbr1 MW6IC2015GNBR1 13 rf device data freescale semiconductor typical characteristics ? 1805 - 1880 mhz 1900 26 32 1800 ?60 0 irl g ps imd f, frequency (mhz) v dd = 26 vdc, p out = 7.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma 100 khz tone spacing 31 ?10 30 29 ?20 28 ?30 27 ?40 ?50 1820 1860 1880 figure 23. two - tone wideband performance @ p out = 7.5 watts avg. pae pae , power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 1840 1880 10 30 1800 ?60 0 irl f, frequency (mhz) v dd = 26 vdc, p out = 1.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma 100 khz tone spacing 26 ?12 22 18 ?24 14 ?36 ?48 1820 1860 figure 24. two - tone wideband performance @ p out = 1.5 watts avg. pae, power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 1840 g ps p out , output power (watts) pep 30 24 32 1 i dq1 = 100 ma i dq2 = 210 ma v dd = 26 vdc center frequency = 1840 mhz 100 khz tone spacing 30 28 26 10 figure 25. two - tone power gain versus output power g ps , power gain (db) 31 29 27 25 0.1 i dq1 = 100 ma i dq2 = 170 ma i dq1 = 130 ma i dq2 = 170 ma i dq1 = 100 ma i dq2 = 130 ma i dq1 = 70 ma i dq2 = 170 ma 30 ?80 ?10 0.1 7th order v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma f = 1840 mhz, 100 khz tone spacing 5th order 3rd order 110 ?20 ?30 ?40 ?50 ?60 ?70 p out , output power (watts) pep figure 26. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) imd pae
14 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 typical characteristics ? 1805 - 1880 mhz 10 ?70 ?30 0.1 7th order two ?tone spacing (mhz) v dd = 26 vdc, p out = 7.5 w (avg.), i dq1 = 100 ma i dq2 = 170 ma, two ?tone measurements (f1 + f2)/2 = center frequency of 1840 mhz 5th order 3rd order ?35 ?40 ?45 ?50 ?55 ?60 1 100 figure 27. intermodulation distortion products versus tone spacing imd, intermodulation distortion (dbc) ?65 30 48 p3db = 44.7 dbm (30 w) p in , input power (dbm) v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1840 mhz 46 44 42 40 38 15 20 25 actual ideal 10 figure 28. pulsed cw output power versus input power p out , output power (dbm) p1db = 44 dbm (25 w) im3 (dbc), acpr (dbc) 0?60 p out , output power (watts) avg. 40 ?20 30 ?30 25 ?35 20 ?40 5 ?50 11030 pae acpr im3 ?45 15 v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma f1 = 1835 mhz, f2 = 1845 mhz figure 29. 2 - carrier w - cdma acpr, im3, power gain and power added efficiency versus output power pae , power added efficiency (%), g ps , power gain (db) 10 ?55 2?carrier w?cdma 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) 35 ?25 g ps 0.1 30 22 32 0.1 0 50 t c = ?30 c 25 c 85 c ?30 c 25 c 85 c 10 1 30 28 26 24 40 30 20 10 p out , output power (watts) cw figure 30. power gain and power added efficiency versus cw output power g ps , power gain (db) pae, power added efficiency (%) pae g ps v dd = 26 vdc, i dq1 = 100 ma i dq2 = 170 ma, f = 1840 mhz p out , output power (watts) cw figure 31. power gain versus output power 16 v i dq1 = 100 ma i dq2 = 170 ma f = 1840 mhz v dd = 12 v 20 v 24 v 28 v 30 v 25 18 30 020 28 24 22 26 20 51015 g ps , power gain (db) 26 v
mw6ic2015nbr1 MW6IC2015GNBR1 15 rf device data freescale semiconductor typical characteristics ? 1805 - 1880 mhz 2200 20 27 1600 ?40 ?5 s21 f, frequency (mhz) figure 32. broadband frequency response s11 26 ?10 25 ?15 24 ?20 23 ?25 22 ?30 21 ?35 2100 2000 1900 1800 1700 v dd = 26 vdc, p out = 35 dbm cw i dq1 = 100 ma, i dq2 = 170 ma s11 (db) s21 (db) 1920 22 34 1780 t c = ?30 c 25 c 85 c 32 30 28 26 24 1820 1840 1860 f, frequency (mhz) figure 33. power gain versus frequency g ps , power gain (db) p out , output power (watts) avg. 30 4 10 v dd = 26 vdc i dq1 = 100 ma i dq2 = 170 ma f = 1840 mhz edge modulation 8 6 0 10 1 2 20 50 40 30 0 10 pae t c = 85 c 25 c ?30 c figure 34. evm and power added efficiency versus output power evm, error vector magnitude (% ms) pae, power added efficiency (%) 30 ?85 ?50 p out , output power (watts) avg. ?55 ?60 ?65 ?70 ?75 ?80 110 t c = 25 c v dd = 26 vdc i dq1 = 100 ma, i dq2 = 170 ma f = 1840 mhz, edge modulation ?30 c 25 c 85 c ?30 c sr @ 400 khz figure 35. spectral regrowth at 400 and 600 khz versus output power spectral regrowth @ 400 khz and 600 khz (dbc) 1800 1880 1900 v dd = 26 vdc, p out = 7.5 w (avg.) i dq1 = 100 ma, i dq2 = 170 ma two ?tone measurements, center frequency = 1840 mhz evm 0.1 sr @ 600 khz 85 c
16 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 z o = 50 z load f = 1800 mhz f = 1880 mhz z source f = 1880 mhz f = 1800 mhz v dd = 26 vdc, i dq1 = 130 ma, i dq2 = 170 ma, p out = 3 w avg. f mhz z source z load 1800 24.32 - j26.99 1.94 - j1.29 1820 23.96 - j25.93 1.88 - j1.42 1840 23.86 - j25.63 1.83 - j1.54 1860 23.01 - j24.23 1.79 - j1.64 1880 23.55 - j23.33 1.74 - j1.75 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 36. series equivalent source and load impedance ? 1805 - 1880 mhz
mw6ic2015nbr1 MW6IC2015GNBR1 17 rf device data freescale semiconductor td - scdma characterization z6 0.060 x 0.237 microstrip z7 0.539 x 0.056 microstrip z8 0.190 x 0.056 microstrip z9, z10 1.066 x 0.078 microstrip pcb taconic tlx8, 0.020 , r = 2.55 z1 0.772 x 0.056 microstrip z2 0.409 x 0.056 microstrip z3 0.138 x 0.237 microstrip z4 0.148 x 0.237 microstrip z5 0.064 x 0.237 microstrip figure 37. mw6ic2015nbr1(gnbr1) test circuit schematic ? td - scdma z2 rf input z3 z4 rf output c10 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc nc nc dut c1 v dd1 z9 quiescent current temperature compensation z1 nc z10 z7 z8 c7 c8 c4 c5 c11 c13 c12 c6 nc c9 c2 c3 nc nc nc z6 z5 v gg c14 r1 r2 table 8. mw6ic2015nbr1(gnbr1) test circuit component designations and values ? td - scdma part description part number manufacturer c1, c3, c5, c14 2.2 f chip capacitors c3225x5r1h225mt tdk c2, c4, c10 5.6 pf chip capacitors 08051j5r6cbs atc c6 1 pf chip capacitor 08051j1r0bbs atc c7, c8 2.7 pf chip capacitors 08051j2r7cbs atc c9, c11 0.5 pf chip capacitors 08051j0r5bbs atc c12, c13 100 nf chip capacitors c1206ck104k5rc kemet r1, r2 5 k potentiometer cms cermet multi - turn 3224w bourns
18 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 figure 38. mw6ic2015nbr1(gnbr1) test circuit component layout ? td - scdma mw6ic2015nb, rev. 1 v dd1 c1 v dd2 c6 c13 c12 r1 r2 v gg c14 c5 c4 c11 c10 c8 c7 c9 c3 c2
mw6ic2015nbr1 MW6IC2015GNBR1 19 rf device data freescale semiconductor typical characteristics ?60 0 p out , output power (dbm) avg. ?20 4 ?25 3.5 ?30 2.5 15 21 27 2 ?45 figure 39. 3 - carrier td - scdma acpr, alt and power added efficiency versus output power alt/acpr (dbc) ?35 ?40 17 0.5 adj ?u pae, power added efficiency (%) 3?carrier td?scdma v dd1 = v dd2 = 28 v i dq1 = 150 ma, i dq2 = 160 ma f = 2017.5 mhz alt?u alt?l 19 23 25 3 adj ?l ?50 ?55 1 1.5 ?60 0 p out , output power (dbm) avg. ?20 4 ?25 3.5 ?30 2.5 15 21 27 2 ?45 figure 40. 6 - carrier td - scdma acpr, alt and power added efficiency versus output power alt/acpr (dbc) ?35 ?40 17 0.5 adj ?u pae, power added efficiency (%) alt?u alt?l 19 23 25 3 adj ?l ?50 ?55 1 1.5 6?carrier td?scdma v dd1 = v dd2 = 28 v i dq1 = 150 ma, i dq2 = 160 ma f = 2017.5 mhz pae pae td - scdma test signal ?80 ?130 ?30 (dbm) ?40 ?50 ?60 ?70 ?90 ?100 ?110 ?120 1.5 mhz center 2.0175 ghz span 15 mhz f, frequency (mhz) figure 41. 3 - carrier td - scdma spectrum 1.28 mhz channel bw ?80 ?130 ?30 (dbm) ?40 ?50 ?60 ?70 ?90 ?100 ?110 ?120 2.5 mhz center 2.0175 ghz span 25 mhz f, frequency (mhz) figure 42. 6 - carrier td - scdma spectrum 1.28 mhz channel bw vbw = 300 khz sweep time = 200 ms rbw = 30 khz vbw = 300 khz sweep time = 200 ms rbw = 30 khz +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset ?alt1 in 1.28 mhz bw ?1.6 mhz offset +alt2 in 1.28 mhz bw +3.2 mhz offset +alt1 in 1.28 mhz bw +1.6 mhz offset ?alt1 in 1.28 mhz bw ?1.6 mhz offset ?alt2 in 1.28 mhz bw ?3.2 mhz offset ?alt2 in 1.28 mhz bw ?3.2 mhz offset
20 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 z o = 50 z load z source f = 2070 mhz f = 1950 mhz f = 2070 mhz f = 1950 mhz v dd = 28 vdc, i dq1 = 150 ma, i dq2 = 160 ma f mhz z source z load 1950 25.25 + j0.19 1.78 + j0.33 1960 25.16 + j0.34 1.75 + j0.43 1970 25.07 + j0.49 1.72 + j0.54 1980 24.98 + j0.64 1.68 + j0.67 1990 24.89 + j0.79 1.65 + j0.78 2000 24.80 + j0.94 1.63 + j0.89 2010 24.71 + j1.09 1.62 + j1.00 2020 24.63 + j1.25 1.61 + j1.09 2030 24.54 + j1.40 1.58 + j1.19 2040 24.45 + j1.56 1.55 + j1.31 2050 24.37 + j1.71 1.50 + j1.43 2060 24.28 + j1.87 1.48 + j1.62 2070 24.20 + j2.03 1.46 + j1.65 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 43. series equivalent input and load impedance ? td - scdma z source z load input matching network device under test output matching network
mw6ic2015nbr1 MW6IC2015GNBR1 21 rf device data freescale semiconductor package dimensions
22 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1
mw6ic2015nbr1 MW6IC2015GNBR1 23 rf device data freescale semiconductor
24 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1
mw6ic2015nbr1 MW6IC2015GNBR1 25 rf device data freescale semiconductor
26 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1
mw6ic2015nbr1 MW6IC2015GNBR1 27 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 feb. 2007 ? added ?and td - scdma? to data sheet description paragraph, p. 1. ? updated verbiage on typical performances table, p. 2 ? corrected v bias and v supply callouts, figs. 3 and 21, test circuit schematic, p. 4, 11, figs. 4 and 22, test circuit component layout, p. 5, 12 ? updated part numbers in tables 6 and 7, component designations and values, to rohs compliant part numbers, p. 4, 11 ? adjusted scale for figs. 7 and 25, two - tone power gain versus output power, figs. 8 and 26, intermodulation distortion products versus output power, figs. 11 and 29, 2 - carrier w - cdma acpr, im3, power gain and power added efficiency versus output power, figs. 12 and 30, power gain and power added efficiency versus cw output power, figs. 16 and 34, evm and power added efficiency versus output power, figs. 17 and 35, spectral regrowth at 400 and 600 khz versus output power, to better match the device?s capabilities, p. 6 - 8, 13 - 15 ? replaced figure 18, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 9 ? corrected series impedance data table test conditions, figs. 20 and 36, p. 10, 16 ? added td - scdma test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 17 - 20. ? added product documentation and revision history, p. 27
28 rf device data freescale semiconductor mw6ic2015nbr1 MW6IC2015GNBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw6ic2015n rev. 2, 2/2007

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